Method of producing ferroelectric capacitor

Details Method of producing ferroelectric capacitor Method of producing ferroelectric capacitor

2006-07-18

2006-07-18

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000

Reexamination Certificate

active

07078288

ABSTRACT:
A method of producing a ferroelectric capacitor includes forming a first insulating layer on a semiconductor substrate with an MOSFET. After a first interlayer insulating layer is formed, a first conductive layer, a ferroelectric layer, and a second conductive layer are laminated on the first interlayer insulating layer to form a ferroelectric capacitor. After a first opening is formed in a ferroelectric thin layer, first restoration annealing is performed relative to a first member formed of a first interlayer insulating layer and the ferroelectric capacitor. A second interlayer insulating layer is formed on the first interlayer insulating layer, and a second opening is formed in the second interlayer insulating layer through etching. Then, second restoration annealing is performed relative to a second member formed of the first member and the second interlayer insulating layer with the second opening under in an order of nitrogen, oxygen, and nitrogen, respectively.

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