Method of producing annealed wafer and annealed wafer

Details Method of producing annealed wafer and annealed wafer Method of producing annealed wafer and annealed wafer

2007-03-13

2007-03-13

Wyszomierski, George P. (Department: 1742)

Metal treatment

Process of modifying or maintaining internal physical...

Heating or cooling of solid metal

C117S003000, C438S795000

Reexamination Certificate

active

10482099

ABSTRACT:
The present invention is a method of producing an annealed wafer wherein a silicon single crystal wafer having a diameter of 200 mm or more produced by the Czochralski (CZ) method is subjected to a high temperature heat treatment in an atmosphere of an argon gas, a hydrogen gas, or a mixture gas thereof at a temperature of 1100–1350° C. for 10–600 minutes, and before the high temperature heat treatmen, a pre-annealing is performed at a temperature less than the temperature of the high temperature heat treatment, so that the growth of slip dislocations is suppressed by growing oxide precipitates. Thereby, there is provided a method of producing an annealed wafer wherein the generation and growth of slip dislocations generated in a high temperature heat treatment are suppressed and the defect density in the wafer surface layer is lowered even in the case of a silicon single crystal wafer having a large diameter of 200 mm or more, and the annealed wafer.

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