Method of producing a thin silicon-on-insulator layer

Details Method of producing a thin silicon-on-insulator layer Method of producing a thin silicon-on-insulator layer

1985-06-24

1986-07-22

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576B, 29576E, 148 15, 148175, 156630, 156633, 156643, 156646, 156645, 156657, 156662, 204192E, 204192N, 252 791, 252 793, 252 795, 427 85, 427 86, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046017798

ABSTRACT:
A method of forming a thin silicon layer upon which semiconductor devices may be constructed. An epitaxial layer is grown on a silicon substrate, and oxygen or nitrogen ions are implanted into the epitaxial layer in order to form a buried etch-stop layer therein. An oxide layer is grown on the epitaxial layer, and is used to form a bond to a mechanical support wafer. The silicon substrate is removed using grinding and/or HNA, the upper portions of the epitaxy are removed using EDP, EPP or KOH, and the etch-stop is removed using a non-selective etch. The remaining portions of the epitaxy forms the thin silicon layer. Due to the uniformity of the implanted ions, the thin silicon layer has a very uniform thickness.

REFERENCES:
patent: 3425878 (1969-02-01), Dersin et al.
patent: 3721593 (1973-03-01), Hays et al.
patent: 3976511 (1976-08-01), Johnson
patent: 3997381 (1976-12-01), Wanlass
patent: 4230505 (1980-10-01), Wu et al.

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