Method of producing a semiconductor device with reduced fringe c

Details Method of producing a semiconductor device with reduced fringe c Method of producing a semiconductor device with reduced fringe c

1999-06-11

2000-09-26

Pham, Long

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, 438303, 438306, H01L 21336

Patent

active

061241768

ABSTRACT:
A semiconductor device and a method of producing the same are disclosed. Cavities intervene between a gate electrode and a source and a drain region for reducing a capacitance. The cavities successfully reduce a fringe capacitance between the gate electrode and the source and drain regions. The side walls are lower in height than the gate electrode, so that the electrode protrudes upward over the top of the side walls. Insulation films are etched back in order to expose the surfaces of the gate electrode and source and drain electrodes. Thereafter, silicide is formed on the gate electrode and a substrate. This allows the gate electrode and source and drain electrodes to be wired via the silicide and thereby reduces the resistance of the device.

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