Method of producing a semiconductor device having an oxide film

Details Method of producing a semiconductor device having an oxide film Method of producing a semiconductor device having an oxide film

2005-09-29

2009-10-06

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S261000, C438S264000, C438S593000, C438S594000, C438S595000, C438S663000, C438S770000

Reexamination Certificate

active

07598140

ABSTRACT:
A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each other. In the first oxide film, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. The thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C become 1.5 times of a sectional area of the region B, while a film thickness of the region B is maintained.

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