Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

2008-06-06

2009-11-24

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S771000, C438S772000, C438S775000, C257S632000, C257SE33030, C257SE33060, C427S579000, C427S255290

Reexamination Certificate

active

07622396

ABSTRACT:
A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.

REFERENCES:
patent: 5250323 (1993-10-01), Miyasaki
patent: 5484484 (1996-01-01), Yamaga
patent: 5888579 (1999-03-01), Lun
patent: 5916365 (1999-06-01), Sherman
patent: 2002/0094306 (2002-07-01), Hara et al.
patent: 6-163434 (1994-06-01), None
patent: 6222388 (1994-08-01), None
patent: 09-077593 (1997-03-01), None
patent: 9-77593 (1997-03-01), None
patent: 9-82696 (1997-03-01), None
patent: 09-82696 (1997-03-01), None
patent: 11-087341 (1999-03-01), None
patent: 2001-303251 (2001-10-01), None
Korean Office Action of Jun. 16, 2008 for counterpart application 2006-233849.
Korean Office Action of Dec. 15, 2008 for counterpart application 2006-233849.
Hiroshi Goto et al.; “Atomic Layer Controlled Deposition of Silicon-Nitride with Self-Limiting Mechanism;” Technical Report of lEICE, SDM95-181, Dec. 1995; pp. 47-54.
Shunsuke Morishita et al.; “Atomic-Layer Chemical-Vapor-Deposition of Silicon-Nitride;” Applied Surface Science 112; 1997, pp. 198-204.
Suguru Kanemoto et al.; “Silicon Shot Gas Epitaxy-Dose Controlled Digital Epitaxy;” (30p-HA-1), Extended Abstracts (the 54thAutumn Meeting), Sep. 1993, pp. 335.

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