Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

2008-03-25

2008-03-25

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S589000, C257SE21419, C257SE21428

Reexamination Certificate

active

11345310

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a cell region in a surface portion of the substrate for operating as a transistor, a gate lead wiring region having a gate lead pattern on the substrate, a trench in the surface portion of the substrate extending from the cell region to the gate lead wiring region, an oxide film on an inner surface of the trench, and a gate electrode in the trench insulated with at least the oxide film from the substrate. A speed of formation of a main portion of the sidewalls of the trench at the gate lead wiring region is greater than that of a main portion of the sidewalls of the trench at the cell region, so that a thickness of the oxide film at the gate lead wiring region is greater than that at the cell region.

REFERENCES:
patent: 5610422 (1997-03-01), Yanagiya et al.
patent: 5726088 (1998-03-01), Yanagiya et al.
patent: 6057558 (2000-05-01), Yamamoto et al.
patent: 6274905 (2001-08-01), Mo
patent: 6285058 (2001-09-01), Narazaki et al.
patent: 6355974 (2002-03-01), Lin et al.
patent: 6469345 (2002-10-01), Aoki et al.
patent: 6620669 (2003-09-01), Hijzen et al.
patent: 7026215 (2006-04-01), Aoki et al.
patent: 2002/0167046 (2002-11-01), Aoki et al.
patent: A-10-214968 (1998-08-01), None
patent: A-10-256545 (1998-09-01), None

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