Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

1999-02-10

2000-09-05

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438272, 257328, 257329, 257330, 257335, H01L 29792

Patent

active

061142077

ABSTRACT:
In a semiconductor device having a substrate, a p-type semiconductor layer, an n-type channel well region, a p-type lightly doped source region, and a source electrode formed on the substrate in this order, a p-type heavily-doped source region, an impurity concentration of which is higher than that of the lightly-doped source region, is formed in a surface region of the lightly-doped source region. The source electrode is formed to contact the heavily-doped source region. As a result, a punch through phenomenon between the p-type source region and the p-type semiconductor layer through the n-type channel well region can be prevented without increasing in the On resistance of the semiconductor device.

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Dialog File 347: JAPIO English Abstract of JP56-96865, Aug. 1981.

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