Method of producing a semiconductor body

Details Method of producing a semiconductor body Method of producing a semiconductor body

1998-02-12

2000-05-02

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438306, 438734, H01L 21336

Patent

active

060571993

ABSTRACT:
The process produces a semiconductor body with a first region that has a self-aligning structure and with a further second region. The insulation layer lying on a semiconductor layer in the first region is fully removed in the second region using a photographic technique and a subsequent etching process. Subsequently, or at the same time, the requisite structuring of the semiconductor layer and of the insulation layer is carried out in the first region. This leads to substantially lesser topography changes and steps and thus higher packing density in the further region of the semiconductor body.

REFERENCES:
patent: 5057894 (1991-10-01), Ikeda et al.
patent: 5573967 (1996-11-01), Tseng
patent: 5710073 (1998-01-01), Jeng et al.
patent: 5895239 (1999-04-01), Jeng et al.
patent: 5936273 (1999-08-01), Chen
"BiCMOS Memories: Increasing Speed While Minimizing Process Complexity", Craig Lage, Solid State Technology, Aug. 1992, pp. 31-33.
"Bauelemente der Halbleiter-Elektronik", Springer-Verlag Berlin, 1991.

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