Method of producing a high resistivity SIMOX silicon substrate

Details Method of producing a high resistivity SIMOX silicon substrate Method of producing a high resistivity SIMOX silicon substrate

2006-09-26

2006-09-26

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S423000, C438S471000, C438S473000

Reexamination Certificate

active

07112509

ABSTRACT:
The present invention provides a method for generating silicon-on-insulator (SOI) wafers that exhibit a high electrical resistivity. In one embodiment of a method according to the teachings of the invention, a SIMOX process is sandwiched between two Full Oxygen Precipitation (FOP) cycles that sequester interstitial oxygen present in the substrate in the form of oxide precipitates, thereby enhancing the electrical resistivity of the susbtrate.

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