Method of processing wafers with low mass support

Details Method of processing wafers with low mass support Method of processing wafers with low mass support

1998-11-02

2000-09-19

Booth, Richard

Semiconductor device manufacturing: process

With measuring or testing

118725, 165253, 392418, 392416, H01L 2166, G01R 3126

Patent

active

061210617

ABSTRACT:
A method is provided for treating wafers on a low mass support. The method includes mounting a temperature sensor in proximity to the wafer, which is supported on the low mass support, such that the sensor is only loosely thermally coupled to the wafer. A temperature controller is programmed to critically tune the wafer temperature in a temperature ramp, though the controller directly controls the sensor temperature. A wafer treatment, such as epitaxial silicon deposition, is started before the sensor temperature has stabilized. Accordingly, significant time is saved for the treatment process, and wafer throughput improved.

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