Method of processing substrates

Details Method of processing substrates Method of processing substrates

2005-07-26

2005-07-26

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S013000, C216S077000, C134S001100, C438S710000

Reexamination Certificate

active

06921493

ABSTRACT:
This invention relates to a method of oxide hardmask aluminum etching in metal dry etch processors. It consists of two steps: the step of dry etching an aluminum interconnect stack by using an etch gas composed mainly of boron trichloride/chlorine/fluoroform
itrogen, and the step of removing etch remnants by using a vapor plasma. The function of the etch gas is to etch the aluminum interconnection pattern in the semi-conductor, and the function of the water vapor plasma is to prevent the corrosion of a chip during the process of removing etch remnants, which will further reduce water rinsing and solution cleaning as in conventional practice, of water rinsing and solution cleaning after removal of photoresist.

REFERENCES:
patent: 6177353 (2001-01-01), Gutsche et al.
patent: 6617794 (2003-09-01), Barnes et al.
patent: 2001/0009249 (2001-07-01), Kuo et al.
patent: 2001/0041453 (2001-11-01), Ohuchi

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