Method of preventing semiconductor layers from bending and...

Details Method of preventing semiconductor layers from bending and... Method of preventing semiconductor layers from bending and...

2006-09-26

2006-09-26

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S439000, C438S400000, C438S791000, C438S424000, C257S510000, C257S499000, C257S649000

Reexamination Certificate

active

07112849

ABSTRACT:
Disclosed herein are various methods for preventing bending of a patterned SOI layer during trench sidewall oxidation, the methods comprising providing a patterned SOI layer having at least one trench, said patterned SOI layer disposed upon an underlying buried silicon oxide layer; and blocking diffusion of oxygen between said patterned SOI and buried silicon oxide layer.

REFERENCES:
patent: 4631803 (1986-12-01), Hunter et al.
patent: 4775641 (1988-10-01), Duffy et al.
patent: 6010660 (2000-01-01), Pozdeev
patent: 6238998 (2001-05-01), Leobandung

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