Method of preventing photoresist poisoning of a...

Details Method of preventing photoresist poisoning of a... Method of preventing photoresist poisoning of a...

2007-02-06

2007-02-06

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C257SE21029

Reexamination Certificate

active

10890622

ABSTRACT:
A method comprises forming a low-dielectric constant (low-k) layer over a semiconductor substrate, forming an anti-reflective layer over the low-k layer, forming at least one opening in the anti-reflective layer and in the low-k layer, forming a nitrogen-free liner in the at least one opening, and forming at least one recess through the nitrogen-free liner, the anti-reflective layer, and at least partially into the low-k layer, the at least one recess is disposed over the at least one opening.

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patent: 6372661 (2002-04-01), Lin et al.
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patent: 6391761 (2002-05-01), Lui
patent: 6602780 (2003-08-01), Shih et al.
patent: 2005/0101119 (2005-05-01), Li et al.

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