Method of preventing damage to porous low-k materials during...

Details Method of preventing damage to porous low-k materials during... Method of preventing damage to porous low-k materials during...

2006-07-25

2006-07-25

Zarneke, David A. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21584

Reexamination Certificate

active

07081407

ABSTRACT:
A method of forming a feature in a porous low-K dielectric layer is provided. A porous low-K dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the porous low-K dielectric layer. A feature is etched into the porous low-K dielectric layer. A protective layer is deposited over the feature after the etching the feature. The patterned photoresist mask is stripped, so that part of the protective layer is removed, where protective walls formed from the protective layer remain in the feature.

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International Search Report dated Dec. 14, 2005.

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