Method of preparing resist pattern

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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427271, 430296, G03C 500

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active

042647150

ABSTRACT:
A method of preparing a fine and highly precise resist pattern comprising a step of forming a positive resist layer consisting of poly-(methacrylic anhydride) on a substrate, a step of irradiating the resist layer thus formed with a predetermined pattern of ionizing radiation and a step of developing the irradiated resist pattern with a developer comprising a solvent mixture composed of a polar organic solvent (A) capable of dissolving poly-(methyacrylic anhydride) and a non-solvent (B) incapable of dissolving poly-(methacrylic anhydride).

REFERENCES:
patent: 3984582 (1976-10-01), Feder et al.
patent: 3987215 (1976-10-01), Cortellino
patent: 4004043 (1977-01-01), Hiraoka
patent: 4051271 (1977-09-01), Fujishige

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