Method of preparing a semiconductor layer for an optical transfo

Details Method of preparing a semiconductor layer for an optical transfo Method of preparing a semiconductor layer for an optical transfo

1997-05-28

1999-07-06

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438763, 438 93, 438 94, 438 95, C07F 306

Patent

active

059207981

ABSTRACT:
A semiconductor layer for photoelectric transfer device for forming a p-n junction, which has large surface area and uniform film pressure, is formed in the atmosphere under normal pressure for several minutes. The semiconductor layer for forming a p-n junction is composed of a compound semiconductor of a Group II element(selected from the group consisting of Cd, Zn and Hg)-Group VI element(selected from the group consisting of S and Te). A semiconductor layer having a p or n conductive type is formed on a substrate by pyrolytically decomposing an organometallic compound containing a II-VI group atom bond. A semiconductor film is formed on the surface of a substrate by dispersing or dissolving an organometallic compound in a solvent to form a solution, applying ink on the surface of the substrate using a suitable printing method and subjecting to a heat treatment.

REFERENCES:
patent: 5157136 (1992-10-01), Arnold et al.
patent: 5527909 (1996-06-01), Brennan et al.

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