Method of preparing a semiconductor having a controlled crystal

Details Method of preparing a semiconductor having a controlled crystal Method of preparing a semiconductor having a controlled crystal

1997-08-15

1999-03-16

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438150, 438487, H01L 21324

Patent

active

058829601

ABSTRACT:
A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.

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English Translation of Japanese Patent Office Communication about Claim Rejection of Corresponding Japanese Patent Application.

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