Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-04-24
2007-04-24
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C257SE21273
Reexamination Certificate
active
10672311
ABSTRACT:
Methods of preparing a porous low-k dielectric material on a substrate are provided. The methods involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film, leaving a porous low-k dielectric matrix. Methods using oxidative conditions and non-oxidative conditions are described. The methods described may be used to remove porogen from porogen-containing precursor films. The porogen may be a hydrocarbon such as a terpene (e.g., alpha-terpinene) or a norbornene (e.g., ENB). The resulting porous low-k dielectric matrix can then be annealed to remove water and remaining silanols capped to protect it from degradation by ambient conditions, which methods will also be described.
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Fu Haiying
Lu Brian G.
Schulberg Michelle T.
Tipton Adrianne K.
Van Cleemput Patrick A.
Beyer Weaver & Thomas LLP
Coleman W. David
Novellus Systems Inc.
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