Method of plasma etching transition metal oxides

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Reexamination Certificate

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C216S070000, C216S075000, C216S076000

Reexamination Certificate

active

07955515

ABSTRACT:
A method of plasma etching transition metal oxide thin films using carbon monoxide as the primary source gas. This permits carbonyl chemistries to be used at ambient temperature, without heating.

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