Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2011-06-07
2011-06-07
Tran, Binh X (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C216S070000, C216S075000, C216S076000
Reexamination Certificate
active
07955515
ABSTRACT:
A method of plasma etching transition metal oxide thin films using carbon monoxide as the primary source gas. This permits carbonyl chemistries to be used at ambient temperature, without heating.
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Konevecki Michael W.
Raghuram Usha
Dugan & Dugan PC
SanDisk 3D LLC
Tran Binh X
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