Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-07-11
2006-07-11
Goudreau, George (Department: 1763)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S719000, C438S695000, C438S700000, C438S713000, C438S725000, C438S734000
Reexamination Certificate
active
07074723
ABSTRACT:
We have developed an uncomplicated method of plasma etching deeply recessed features such as deep trenches, of at least 5 μm in depth, in a silicon-containing substrate, in a manner which generates smooth sidewalls, having a roughness of less than about 1 μm, typically less than about 500 nm, and even more typically between about 100 nm and 20 nm. Features having a sidewall taper angle, relative to an underlying substrate, typically ranges from about 85° to about 92° and exhibiting the smooth sidewalls are produced by the method. In one embodiment, a stabilizing etchant species is used constantly during the plasma etch process, while at least one other etchant species and at least one polymer depositing species are applied intermittently, typically periodically, relative to each other. In another embodiment, the stabilizing etchant species is used constantly and a mixture of the other etchant species and polymer depositing species is used intermittently.
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Chinn Jeffrey D.
Li Yanping
Pornsin-Sirirak Nicholas
Rattner Michael
Applied Materials Inc.
Church Shirley L.
Goudreau George
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