Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-20
2008-08-05
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S648000, C438S680000, C257SE21170, C257SE21171, C257SE21168
Reexamination Certificate
active
07407876
ABSTRACT:
A method for processing a substrate for forming TaC and TaCN films having good adhesion to Cu. The method includes disposing the substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, and depositing a TaC or TaCN film on the substrate using the PEALD process. The PEALD process includes (a) exposing the substrate to a first process material containing tantalum, (b) exposing the substrate to a second process material containing a plasma excited reducing agent, (c) repeating steps (a) (b) a predetermined number of times, (d) exposing the substrate to plasma excited Argon, and (e) repeating steps (c) and (d) until the TaC or TaCN film has a desired thickness. Preferably, purging of the process chamber is performed after one or more of the exposing steps.
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Ahmadi Mohsen
Geyer Scott B.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tokyo Electron Limited
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