Method of plasma doping

Details Method of plasma doping Method of plasma doping

2007-03-20

2007-03-20

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C257SE21316

Reexamination Certificate

active

10532768

ABSTRACT:
A method of plasma doping in which dilution of B2H6is maximized for enhanced safety and stable plasma generation and sustention can be carried out without lowering of doping efficiency and in which the amount of dopant injected can be easily controlled. In particular, a method of plasma doping characterized in that B2H6gas is used as a material containing doping impurity while He is used as a substance of high dissociation energy and that the concentration of B2H6in mixed gas is less than 0.05%.

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Bunji Mizuno et al., “Plasma Doping into the Side-Wall of a Sub-0.5 μm Width Trench”, Extended Abstracts of the 19thConference on Solid State Devices and Materials, Tokyo, 1987, pp. 319-322.

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