Method of planarize and improve the effectiveness of the stop la

Details Method of planarize and improve the effectiveness of the stop la Method of planarize and improve the effectiveness of the stop la

1998-09-28

2000-02-15

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

698700, 698740, H01L 2100

Patent

active

060252723

ABSTRACT:
A method of manufacturing a semiconductor device including a step of filling crevices or non-level regions formed during the manufacture of the semiconductor device with a spin-on dielectric material. The spin-on dielectric material prevents conductive material from filling the crevices and causing the device to fail.

REFERENCES:
patent: 5747381 (1998-05-01), Wu et al.
patent: 5821160 (1998-10-01), Rodriguea et al.
patent: 5849637 (1998-12-01), Wang
patent: 5883004 (1999-03-01), Shiu et al.

Affiliated with

Also associated with

Rating

Method of planarize and improve the effectiveness of the stop la does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of planarize and improve the effectiveness of the stop la, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of planarize and improve the effectiveness of the stop la will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1905620