Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Reexamination Certificate
2006-04-14
2010-06-15
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
C438S725000, C438S689000, C438S798000, C257SE21256
Reexamination Certificate
active
07737010
ABSTRACT:
A method of forming an intermediate semiconductor device is disclosed that comprises providing a semiconductor substrate, forming a photoresist layer on the semiconductor substrate, implanting a dopant into the semiconductor substrate, and removing a dopant-containing layer from the photoresist layer. The dopant-containing layer includes dopant residuals and a carbon-rich crust and may be formed during implantation. The dopant-containing layer may be removed from the photoresist layer by exposing the dopant-containing layer to a water rinse, a chlorinated plasma or to a fluorinated plasma. The water rinse may include deionized water that is maintained at a temperature that ranges from approximately 25° C. to approximately 80° C. The fluorinated plasma may be formed from a gaseous precursor selected from the group consisting of nitrogen trifluoride, carbon tetrafluoride, trifluoromethane, hexafluoroethane, sulfur hexafluoride, and mixtures thereof. A method of forming an ultrashallow junction is also disclosed.
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Hanson Robert J.
McTeer Allen
Qin Shu
Coleman W. David
Crawford Latanya
Micro)n Technology, Inc.
TraskBritt
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