Method of patterning thin film

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156646, 156652, 156656, 1566591, 156667, 204192E, 360110, B44C 122, C03C 1500, C03C 2506, C23F 102

Patent

active

045928010

ABSTRACT:
A method of patterning a thin film by dry etching is disclosed in which, in order for a thin alumina film to have a predetermined pattern, the thin alumina film is selectively removed by carrying out the ion beam etching which uses a carbon fluoride gas, while using a photoresist film as a mask.

REFERENCES:
patent: 4288283 (1981-09-01), Umezaki et al.
patent: 4390394 (1983-06-01), Mathuni et al.
J. Appl. Phys. 53(3), Mar. 1982, Fabrication of a Thin Film Head Using Polyimide Resin and Sputtered Ni-Fe Films, Hanazono et al., pp. 2608-2610.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of patterning thin film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of patterning thin film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of patterning thin film will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1231421

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.