Method of pattern formation

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430312, 430314, 430313, 430324, 430326, 430330, 430329, 430 5, 430325, 430322, 1566591, 1566611, G03C 500

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044342241

ABSTRACT:
In a method of pattern formation according to this invention, an organic polymer resist material is simultaneously used with an inorganic resist material, i.e., a first desired pattern consisting of the organic polymer resist material layer is formed on a substrate material, then the whole surface thereof is covered with the inorganic resist material layer, a second desired pattern is then formed with the inorganic resist material layer, and then the resulting second desired pattern is transferred to the organic polymer resist material. According to the invention, mask alignment can automatically be effected by detecting reflected light from an alignment mark on the substrate, formation of a relief including large and small patterns is also easily carried out, throughput can also be increased. The method of the invention may be combined with various process steps, so that such combined method is applicable for deep and shallow etching, formation of an interlayer insulation film, and lift-off method.

REFERENCES:
patent: 3412456 (1968-11-01), Ebisawa
patent: 4276368 (1981-06-01), Heller et al.
patent: 4320191 (1982-03-01), Yoshikawa et al.
patent: 4339526 (1982-07-01), Baise et al.
"Bilevel High Resolution Photolithographic Technique . . . " by Tai et al., J. Vac. Sci. Technol., 16(6), Nov./Dec. 1979.
"Submicron Optical Lithography Using an Inorganic Resist/Polymer Bilevel Scheme" by Tai et al., J. Vac. Sci. Technol., 17(5), Sep./Oct. 1980.

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