Method of oxidizing a substrate in the presence of nitride and o

Details Method of oxidizing a substrate in the presence of nitride and o Method of oxidizing a substrate in the presence of nitride and o

1998-10-19

2000-09-05

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438216, 438287, 438591, 438761, 438762, 438770, 438774, H01L 218238, H01L 21336, H01L 213205, H01L 2131, H01L 21469

Patent

active

061142581

ABSTRACT:
A system and method of forming an oxide in the presence of a nitrogen-containing material. A substrate having a nitrogen-containing material on a surface is placed in a reaction chamber. An oxygen-containing gas, or an oxygen-containing gas and a hydrogen-containing gas are provided to the chamber and reacted in the chamber. The reactive gases are used to oxidize the surface of the substrate and displace the nitrogen-containing material from the interface.

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