Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2008-05-08
2010-02-23
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S210130, C365S204000
Reexamination Certificate
active
07668030
ABSTRACT:
A method of operating a non-volatile memory device reduces a time for discharging a precharged voltage when a program operation or a read operation is performed, thereby decreasing a total operation time of the non-volatile memory device. The non-volatile memory device discharges a bit line and a word line using only a control signal without reading an algorithm block when a precharged voltage is discharged. The method of operating a non-volatile memory device includes detecting an operation command; generating algorithm blocks for generating an operation voltage, for precharging a bit line and a word line, and for performing a specific operation in accordance with the operation command; outputting a discharge enable control signal for the bit line and the word line; and reading an algorithm of turning off and discharging a voltage generating means for generating the operation voltage.
REFERENCES:
patent: 5587951 (1996-12-01), Jazayeri et al.
patent: 7505327 (2009-03-01), Edahiro et al.
patent: 1020070004295 (2007-01-01), None
Dinh Son
Hynix / Semiconductor Inc.
Townsend and Townsend / and Crew LLP
LandOfFree
Method of operating a non-volatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of operating a non-volatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of operating a non-volatile memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4158457