Method of ONO integration into MOS flow

Details Method of ONO integration into MOS flow Method of ONO integration into MOS flow

2009-10-29

2011-12-06

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S404000, C438S594000

Reexamination Certificate

active

08071453

ABSTRACT:
A method of ONO integration of a non-volatile memory device (e.g. EEPROM, floating gate FLASH and SONOS) into a baseline MOS device (e.g. MOSFET) is described. In an embodiment the bottom two ONO layers are formed prior to forming the channel implants into the MOS device, and the top ONO layer is formed simultaneously with the gate oxide of the MOS device.

REFERENCES:
patent: 6946349 (2005-09-01), Lee et al.
patent: 2004/0110390 (2004-06-01), Takagi et al.
patent: 2006/0035432 (2006-02-01), Kim et al.
patent: 2009/0104780 (2009-04-01), Lee

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