Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Patent
1996-11-19
1998-07-07
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
438779, 438931, H01L 21316
Patent
active
057768374
ABSTRACT:
A method of obtaining high quality passivation layers on silicon carbide surfaces by oxidizing a sacrificial layer of a silicon-containing material on a silicon carbide portion of a device structure to substantially consume the sacrificial layer to produce an oxide passivation layer on the silicon carbide portion that is substantially free of dopants that would otherwise degrade the electrical integrity of the oxide layer.
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Bowers Jr. Charles L.
Cree Research Inc.
Summa, Patent Attorney Philip
Whipple Matthew
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