Method of nitride-sealed oxide-buffered local oxidation of silic

Details Method of nitride-sealed oxide-buffered local oxidation of silic Method of nitride-sealed oxide-buffered local oxidation of silic

1998-03-26

1999-10-19

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438452, 438439, H01L 21762

Patent

active

059703644

ABSTRACT:
A method for forming an isolation region in an integrated circuit is disclosed. The method includes forming a pad layer on a semiconductor substrate, and forming an oxidation masking layer on the pad layer, wherein the pad layer relieves stress from the oxidation masking layer. Next, portions of the oxidation masking layer and the pad layer are patterned and etched. A first oxide layer is thermally grown on the substrate, and a second oxide spacer is formed on a sidewall of the pad layer and the oxidation masking layer. After forming a nitride spacer on a surface of the second oxide spacer, the substrate is thermally oxidized to form the isolation region in the substrate.

REFERENCES:
patent: 4563227 (1986-01-01), Sakai et al.
Teng, C., et al., "Optimization of Sidewall Masked Isolation Process", IEEE Journal of Solid-State Circuits, vol. Sc-20, No. 1, pp. 44-51 Feb. 1985.

Affiliated with

Also associated with

Rating

Method of nitride-sealed oxide-buffered local oxidation of silic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of nitride-sealed oxide-buffered local oxidation of silic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of nitride-sealed oxide-buffered local oxidation of silic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2068617