Method of nickel disilicide formation and method of nickel...

Details Method of nickel disilicide formation and method of nickel... Method of nickel disilicide formation and method of nickel...

2011-05-24

2011-05-24

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S581000, C438S586000, C438S795000, C257SE21619

Reexamination Certificate

active

07947560

ABSTRACT:
A method for forming silicide includes the steps of: forming a nickel film on a silicon layer (or a silicon substrate); introducing nitrogen into at least one of the nickel film and the interface between the nickel film and the silicon layer (or the silicon substrate); and after the introduction of the nitrogen, applying heat treatment to the nickel film and the silicon layer (or the silicon substrate) under predetermined conditions to form a nickel disilicide layer.

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T. Ohguro et al., “Nitrogen-doped nickel monosilicide technique for deep submicron CMOS salicide,” IEDM95, pp. 453-456, 1995.
Osamu Nakatsuka et al., “Low-temperature Formation of Epitazial NiSi2Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems,” Japanese Journal of Applied Physics, vol. 44, No. 5A, pp. 2945-2947, 2005.

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