Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-24
2005-05-24
Chaudhurl, Olik (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S482000, C438S484000, C438S520000, C438S522000
Reexamination Certificate
active
06897118
ABSTRACT:
A method for forming a highly activated ultra shallow ion implanted semiconductive elements for use in sub-tenth micron MOSFET technology is described. A key feature of the method is the ability to activate the implanted impurity to a highly active state without permitting the dopant to diffuse further to deepen the junction. A selected single crystalline silicon active region is first amorphized by implanting a heavy ion such as silicon or germanium. A semiconductive impurity for example boron is then implanted and activated by pulsed laser annealing whereby the pulse fluence, frequency, and duration are chosen to maintain the amorphized region just below it's melting temperature. It is found that just below the melting temperature there is sufficient local ion mobility to secure the dopant into active positions within the silicon matrix to achieve a high degree of activation with essentially no change in concentration profile. The selection of the proper laser annealing parameters is optimized by observation of the reduction of sheet resistance and concentration profile as measured on a test site. Application of the method is applied to forming a MOS FET and a CMOS device. The additional processing steps required by the invention are applied simultaneously to both n-channel and p-channel devices of the CMOS device pair.
REFERENCES:
patent: 5953615 (1999-09-01), Yu
patent: 5956603 (1999-09-01), Talwar et al.
patent: 5966605 (1999-10-01), Ishida
patent: 6319761 (2001-11-01), Zhang et al.
patent: 6365446 (2002-04-01), Chong et al.
patent: 6372585 (2002-04-01), Yu
patent: 6391731 (2002-05-01), Chong et al.
Bhat Mousumi
Cho Byung Jin
Lu Yong Feng
Poon Chyiu-Hyia
See Alex
Brewster William M.
Chartered Semiconductor Manufacturing Ltd.
Chaudhurl Olik
Pike Rosemary L. S.
Saile George O.
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