Method of mounting an electroless nickel immersion gold flip...

Details Method of mounting an electroless nickel immersion gold flip... Method of mounting an electroless nickel immersion gold flip...

2007-12-18

2007-12-18

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C257S772000, C257SE23023, C257S779000, C257SE21508

Reexamination Certificate

active

11172180

ABSTRACT:
A flip chip package, apparatus and technique in which a ball grid array composed of a doped eutectic Pb/Sn solder composition is used. The dopant in the Pb/Sn solder forms a compound or complex with the phosphorous residue from the electroless nickel plating process that is mixable with the Pb/Sn solder. The phosphorous containing compound or complex prevents degradation of the solder/under bump metallization bond associated with phosphorus residue. The interfacial solder/under bump metallization bond is thereby strengthened. This results in fewer fractured solder bonds and greater package reliability.

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Goyal, et al, “Failure Mechanism of Brittle Solder Joint Fracture in the Presence of Electroless Nickel Immersion Gold (ENIG) Interface”, Proceedings of the 52ndElectronic Component and Technology Conference, 732-739, May 2002.
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