Method of monitoring anneal processes using scatterometry,...

Details Method of monitoring anneal processes using scatterometry,... Method of monitoring anneal processes using scatterometry,...

2005-08-23

2005-08-23

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C438S017000, C438S308000, C438S514000

Reexamination Certificate

active

06933158

ABSTRACT:
The present invention is directed to several inventive methods of monitoring anneal processes performed on implant regions, and a system for accomplishing same. In one aspect, the method comprises forming a first plurality of implant regions in a semiconducting substrate, performing at least one anneal process on implant regions, performing a scatterometric measurement of at least one of the implant regions after at least a portion of the anneal process is performed to determine a profile of the implant region and determining an effectiveness of the anneal process based upon the determined profile of the implant region. In other embodiments, one or more parameters of the anneal process may be varied on subsequently processed substrates based upon the determined efficiency of the anneal process.

REFERENCES:
patent: 4188123 (1980-02-01), Kleinknecht
patent: 5011794 (1991-04-01), Grim et al.
patent: 5105362 (1992-04-01), Kotani
patent: 5604581 (1997-02-01), Liu et al.
patent: 5867276 (1999-02-01), McNeil et al.
patent: 5877860 (1999-03-01), Borden
patent: 5880838 (1999-03-01), Marx et al.
patent: 5900633 (1999-05-01), Solomon et al.
patent: 6051348 (2000-04-01), Marinaro et al.
patent: 6081334 (2000-06-01), Grimbergen et al.
patent: 6245584 (2001-06-01), Marinaro et al.
patent: 6433878 (2002-08-01), Niu et al.
patent: 6660543 (2003-12-01), Stirton et al.
patent: 2002/0135781 (2002-09-01), Singh et al.
U.S. Appl. No. 09/824,156, filed Apr. 2, 2001, Stirton.

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