Method of monitoring and controlling a silicon nitride etch step

Details Method of monitoring and controlling a silicon nitride etch step Method of monitoring and controlling a silicon nitride etch step

1996-03-15

1997-06-17

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566531, 1566621, 216 84, H01L 2100

Patent

active

056393423

ABSTRACT:
A patterned silicon nitride layer formed over a semiconductor integrated circuit wafer having a layer of pad oxide is often used as a mask for subsequent processing steps. Etching of the silicon nitride layer is difficult to control and can create defects in the pad oxide layer which are difficult to detect before the manufacture of the semiconductor integrated circuit wafer is completed. A method is described using potassium hydroxide treatment and scanning electron microscope evaluation of a test wafer for detection of defects at the silicon nitride etching step. Continued processing of defective wafers can be terminated and the silicon nitride etching step can be controlled using this method.

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patent: 4316765 (1982-02-01), Thiel
patent: 4484979 (1984-11-01), Stocker
patent: 4820378 (1989-04-01), Loewenstein
patent: 5362356 (1994-11-01), Schoenborn
patent: 5387316 (1995-02-01), Pennell et al.
patent: 5460034 (1995-10-01), Herrick

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