Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-06-05
2007-06-05
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S778000, C438S790000
Reexamination Certificate
active
11126910
ABSTRACT:
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.
REFERENCES:
patent: 5087959 (1992-02-01), Omori et al.
patent: 5554570 (1996-09-01), Maeda et al.
patent: 5817572 (1998-10-01), Chiang et al.
patent: 5818071 (1998-10-01), Loboda et al.
patent: 5926740 (1999-07-01), Forbes et al.
patent: 5989998 (1999-11-01), Sugahara et al.
patent: 6054379 (2000-04-01), Yau et al.
patent: 6057251 (2000-05-01), Goo et al.
patent: 6124641 (2000-09-01), Matsuura
patent: 6140226 (2000-10-01), Grill et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6159871 (2000-12-01), Loboda et al.
patent: 6340435 (2002-01-01), Bjorkman et al.
patent: 6340628 (2002-01-01), Van Cleemput et al.
patent: 6350670 (2002-02-01), Andideh et al.
patent: 6362091 (2002-03-01), Andideh et al.
patent: 6409238 (2002-06-01), Mikenis et al.
patent: 6436824 (2002-08-01), Chooi et al.
patent: 6486061 (2002-11-01), Xia et al.
patent: 6489238 (2002-12-01), Tsui
patent: 6511909 (2003-01-01), Yau et al.
patent: 6521300 (2003-02-01), Hsieh et al.
patent: 6528423 (2003-03-01), Catabay et al.
patent: 6537733 (2003-03-01), Campana et al.
patent: 6541369 (2003-04-01), Huang et al.
patent: 6570256 (2003-05-01), Conti et al.
patent: 6582777 (2003-06-01), Ross et al.
patent: 6593247 (2003-07-01), Huang et al.
patent: 6605549 (2003-08-01), Leu et al.
patent: 6624053 (2003-09-01), Passemard
patent: 6627532 (2003-09-01), Gaillard et al.
patent: 6645883 (2003-11-01), Yamamoto et al.
patent: 6656837 (2003-12-01), Xu et al.
patent: 6673725 (2004-01-01), Shioya et al.
patent: 6703302 (2004-03-01), Miyajima et al.
patent: 6734533 (2004-05-01), Wong
patent: 6737365 (2004-05-01), Kloster et al.
patent: 6740539 (2004-05-01), Conti et al.
patent: 6806185 (2004-10-01), Li et al.
patent: 6902440 (2005-06-01), Dougan et al.
patent: 6903004 (2005-06-01), Spencer et al.
patent: 6913992 (2005-07-01), Schmitt et al.
patent: 2002/0054962 (2002-05-01), Huang
patent: 2002/0054982 (2002-05-01), Dietrich, et al.
patent: 2002/0098714 (2002-07-01), Grill et al.
patent: 2002/0182894 (2002-12-01), Andideh
patent: 2003/0003765 (2003-01-01), Gibson et al.
patent: 2003/0022526 (2003-01-01), Vyvoda et al.
patent: 2003/0032274 (2003-02-01), Daniels et al.
patent: 2003/0035904 (2003-02-01), Hsieh et al.
patent: 2003/0064607 (2003-04-01), Leu et al.
patent: 2003/0068881 (2003-04-01), Xia et al.
patent: 2003/0077916 (2003-04-01), Xu et al.
patent: 2003/0129827 (2003-07-01), Lee et al.
patent: 2003/0139062 (2003-07-01), Grill et al.
patent: 2003/0232495 (2003-12-01), Moghadam et al.
patent: 2004/0076764 (2004-04-01), Forester et al.
patent: 2004/0096593 (2004-05-01), Lukas et al.
patent: 2004/0096672 (2004-05-01), Lukas et al.
patent: 2004/0175929 (2004-09-01), Schmitt et al.
patent: 2004/0175957 (2004-09-01), Lukas et al.
patent: 2004/0195693 (2004-10-01), Kloster et al.
patent: 2005/0064726 (2005-03-01), Reid et al.
patent: 2005/0118799 (2005-06-01), Wu
patent: 2005/0130405 (2005-06-01), Spencer et al.
patent: WO 01/61737 (2001-08-01), None
PCT Partial International Search Report for PCT/US2004/006849, dated Oct. 15, 2004 (AMAT/7838.PC).
PCT International Search Report for PCT/US2004/006849, dated Jan. 19, 2005 (AMAT/7838.PC).
PCT International Written Opinion for PCT/US2004/006849, dated Jan. 19, 2005 (AMAT/7838.PC).
Nguyen Son Van
Schmitt Francimar Campana
Venkataraman Shankar
Xia Li-Qun
Applied Materials Inc.
Patterson and Sheridan
Smith Zandra V.
Tran Thanh Y.
LandOfFree
Method of modifying interlayer adhesion does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of modifying interlayer adhesion, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of modifying interlayer adhesion will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3866667