Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-06-14
2011-06-14
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S623000, C438S638000, C438S788000, C438S787000, C438S795000, C438S513000, C438S792000, C438S798000
Reexamination Certificate
active
07960294
ABSTRACT:
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.
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Nguyen Son Van
Schmitt Francimar Campana
Venkataraman Shankar
Xia Li-Qun
Applied Materials Inc.
Le Thao X
Patterson & Sheridan L.L.P.
Tran Thanh Y
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