Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2005-11-30
2010-02-02
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S795000, C438S770000, C438S776000
Reexamination Certificate
active
07655574
ABSTRACT:
An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.
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Fujiwara Tomonori
Hasebe Kazuhide
Matsuyama Seiji
Nakajima Shigeru
Nakamura Genji
Luu Chuong A.
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
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