Method of modifying insulating film

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...

Reexamination Certificate

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Details

C438S795000, C438S770000, C438S776000

Reexamination Certificate

active

07655574

ABSTRACT:
An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

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patent: 7250375 (2007-07-01), Nakanishi et al.
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patent: WO 02/059956 (2002-08-01), None
patent: WO 03/015151 (2003-02-01), None

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