Semiconductor device manufacturing: process – Making regenerative-type switching device – Having structure increasing breakdown voltage
Reexamination Certificate
2007-06-08
2009-11-03
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having structure increasing breakdown voltage
C438S113000, C438S454000, C257S367000, C257S625000, C257S658000
Reexamination Certificate
active
07611927
ABSTRACT:
A semiconductor die substrate panel is disclosed including a minimum kerf width between adjoining semiconductor package outlines on the panel, while ensuring electrical isolation of plated electrical terminals. By reducing the width of a boundary between adjoining package outlines, additional space is gained on a substrate panel for semiconductor packages.
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Chien Jack Chang
Liao Chih-Chin
Takiar Hem
Ye Ning
Yu Cheemen
Baptiste Wilner Jean
Brewster William M.
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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