Method of microarea analysis with a focused cesium ion beam

Details Method of microarea analysis with a focused cesium ion beam Method of microarea analysis with a focused cesium ion beam

1991-02-12

1992-09-15

Berman, Jack I.

Radiant energy

Inspection of solids or liquids by charged particles

Positive ion probe or microscope type

250306, 250307, H01J 37256

Patent

active

051480271

ABSTRACT:
Cs LMIS with pure Cs or a cesium compound as a source material is specifically employed in a FIB so that the total ion current I.sub.T at the time of ion emission is not greater than 5 .mu.A, whereby the current density distribution of a Cs FIB exhibits a sharp peak and the tailing of the distribution is reduced. By setting the I.sub.T in the range of 0.1 to 2 .mu.A, a high current density of a Cs.sup.+ FIB whose diameter is 0.1 .mu.m is formed. The FIB is particularly used in secondary ion mass spectrometry analysis of a semiconductor material in electronic device manufacturing.

REFERENCES:
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patent: 4694170 (1987-09-01), Slodzian et al.
patent: 4894536 (1990-01-01), Conzemius
patent: 4912327 (1990-03-01), Waugh
Levi-Setti et al, "Aspects of High Resolution Imaging with a Scanning Ion Microprobe", Ultramicroscopy 24 (1988), 97-114, Amsterdam.
Thompson et al, "Artifacts in High Resolution SIMS: The Contribution of the Ion Source", Vacuum/vol. 34/No. 10/11 pp. 947 to 951/1984, Great Britain.
Swanson et al, "A Comparison of Boron Emission Characteristics for Liquid Metal Ion Sources of PtB, PdB, and NiB", J. Vac. Sci. Technol. B6(1), Jan./Feb. 1988.

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