Method of measuring thin layers using SIMS

Details Method of measuring thin layers using SIMS Method of measuring thin layers using SIMS

2007-08-01

2009-08-25

Souw, Bernard E (Department: 2881)

Radiant energy

Inspection of solids or liquids by charged particles

Positive ion probe or microscope type

C250S492210, C250S492300, C257SE27001, C257SE23041, C257SE23134, C257SE23173, C257SE21021, C438S014000, C438S624000, C438S763000

Reexamination Certificate

active

07579590

ABSTRACT:
A method for measuring the thickness of a layer is provided, comprising (a) providing a structure (101) comprising a first layer disposed on a second layer; (b) impinging (103) the structure with a first ion beam comprising a first isotope, thereby sputtering off a portion of the first layer which contains a second isotope and exposing a portion of the second layer; and (c) determining (105) the thickness of the first layer by measuring the amount of the second isotope which is sputtered off.

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