Method of measuring the amount of capacitive coupling of RF powe

Details Method of measuring the amount of capacitive coupling of RF powe Method of measuring the amount of capacitive coupling of RF powe

1995-06-07

1997-09-16

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

216 68, 156345, 118690, 438 17, H01L 21822

Patent

active

056677014

ABSTRACT:
The amount of capacitive coupling of RF power to a semiconductor substrate or wafer in an inductively coupled RF plasma reactor is quantitatively measured by separating the RF current from the plasma through the wafer pedestal into the Fourier components including the fundamental frequency (F) of the RF power and the second harmonic (2F) of the frequency of the RF power and then measuring the current or power of the fundamental component. As an additional feature, the amount of inductive coupling is measured by measuring the current or power of the second harmonic.

REFERENCES:
patent: 4316791 (1982-02-01), Taillet
patent: 5167748 (1992-12-01), Hall
patent: 5458732 (1995-10-01), Butler et al.
patent: 5534231 (1996-07-01), Savas
patent: 5539609 (1996-07-01), Collins et al.
patent: 5556549 (1996-09-01), Patrick et al.

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