Method of measuring surface area variation rate of a polysilicon

Details Method of measuring surface area variation rate of a polysilicon Method of measuring surface area variation rate of a polysilicon

1999-04-22

2000-03-07

Pham, Hoa Q.

Optics: measuring and testing

By polarized light examination

With light attenuation

356445, G01B 1130

Patent

active

060347783

ABSTRACT:
The present invention is a method which can obtain an actual value close to a desired capacitance of capacitor by precisely monitoring the area variation rate of film by using a correlation between a height of hemispherical grains formed on a surface of film and a surface area of film. The present invention provides a method of calculating an area variation rate `C.sub.E ` by using the porosity ratio `f.sub.v ` and the height `t` of hemispherical grains and measuring the capacitance of capacitor by using the obtained area variation rate. According to this method, the area variation rate of film can be obtained close to actual value by measuring the height of hemispherical grains formed on the surface of film, and the variation in capacitance before completion of capacitor can be precisely obtained. In addition, the present invention has effects of improving the reliability and manufacturing yield of capacitor by enabling the monitoring of area variation rate close to actual value in the step of forming the hemispherical grains on the surface of film.

REFERENCES:
patent: 5087121 (1992-02-01), Kakuchi et al.
patent: 5514903 (1996-05-01), Inoue et al.
patent: 5623243 (1997-04-01), Watanabe et al.
patent: 5691249 (1997-11-01), Watanabe et al.
patent: 5731213 (1998-03-01), Ono
patent: 5796484 (1998-08-01), Honma et al.
patent: 5825498 (1998-10-01), Thakur et al.
patent: 5835225 (1998-11-01), Thakur
patent: 5837578 (1998-11-01), Fan et al.
patent: 5850288 (1998-12-01), Honma et al.

Affiliated with

Also associated with

Rating

Method of measuring surface area variation rate of a polysilicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of measuring surface area variation rate of a polysilicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of measuring surface area variation rate of a polysilicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-368344