Method of measuring resistivity of sidewall of contact hole

Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed

Reexamination Certificate

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Details

C438S018000, C438S622000, C438S639000, C257SE21531

Reexamination Certificate

active

07923268

ABSTRACT:
A method of measuring a resistivity of a sidewall of a contact hole formed in a semiconductor device, wherein said semiconductor device includes a first electrode formed on a substrate; a second electrode formed on the first electrode with an insulating film in between; a resist pattern formed on the first electrode and the second electrode; a contact hole formed in the first electrode and the second electrode; and an organic film deposited on the sidewall of the contact hole, includes the steps of: placing a probe needle on the first electrode and the second electrode so that the probe needle contacts with the first electrode and the second electrode several times; establishing electrical conductivity of the probe needle relative to the first electrode and the second electrode; and measuring the resistivity of the organic film between the first electrode and the second electrode.

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patent: 6391669 (2002-05-01), Fasano et al.
patent: 6531327 (2003-03-01), Kanamaru et al.
patent: 7135412 (2006-11-01), Na
patent: 2008/0026573 (2008-01-01), Yanase et al.
patent: 2000-200771 (2000-07-01), None
patent: 2001-053057 (2001-02-01), None

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