Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2011-04-12
2011-04-12
Quach, Tuan N. (Department: 2893)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C438S018000, C438S622000, C438S639000, C257SE21531
Reexamination Certificate
active
07923268
ABSTRACT:
A method of measuring a resistivity of a sidewall of a contact hole formed in a semiconductor device, wherein said semiconductor device includes a first electrode formed on a substrate; a second electrode formed on the first electrode with an insulating film in between; a resist pattern formed on the first electrode and the second electrode; a contact hole formed in the first electrode and the second electrode; and an organic film deposited on the sidewall of the contact hole, includes the steps of: placing a probe needle on the first electrode and the second electrode so that the probe needle contacts with the first electrode and the second electrode several times; establishing electrical conductivity of the probe needle relative to the first electrode and the second electrode; and measuring the resistivity of the organic film between the first electrode and the second electrode.
REFERENCES:
patent: 5925577 (1999-07-01), Solis
patent: 6391669 (2002-05-01), Fasano et al.
patent: 6531327 (2003-03-01), Kanamaru et al.
patent: 7135412 (2006-11-01), Na
patent: 2008/0026573 (2008-01-01), Yanase et al.
patent: 2000-200771 (2000-07-01), None
patent: 2001-053057 (2001-02-01), None
Kawada Shinji
Samukawa Seiji
Yatagai Youichi
Kubotera & Associates LLC.
Oki Semiconductor Co., Ltd.
Quach Tuan N.
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