Method of maufacturing a trench-gate semiconductor device

Details Method of maufacturing a trench-gate semiconductor device Method of maufacturing a trench-gate semiconductor device

2007-04-03

2007-04-03

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S589000, C257S213000, C257SE27155

Reexamination Certificate

active

10538212

ABSTRACT:
A method of making a trench MOSFET includes forming a nitride liner50on the sidewalls28of a trench and a plug of doped polysilicon26at the bottom of a trench. The plug of polysilicon26may then be oxidised to form a thick oxide plug30at the bottom of the trench whilst the nitride liner50protects the sidewalls28from oxidation. This forms a thick oxide plug at the bottom of the trench thereby reducing capacitance between gate and drain.

REFERENCES:
patent: 6326261 (2001-12-01), Tsang et al.
patent: 6331467 (2001-12-01), Brown et al.
patent: 6444528 (2002-09-01), Murphy
patent: 6709912 (2004-03-01), Ang et al.
patent: 0801426 (1997-10-01), None
patent: 0801426 (1997-10-01), None
patent: 0801426 (1997-10-01), None
patent: WO0072372 (2000-11-01), None

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