Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-07-22
1998-05-05
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438543, 438546, 438904, H01L 21336
Patent
active
057473714
ABSTRACT:
A semiconductor device includes a substrate (11), a first region (21) in the substrate (11) wherein the first region (21) has a first conductivity type, a second region (22) in the substrate (11) wherein the second region (22) is adjacent to the first region (21) and wherein the second region (22) has a second conductivity type different from the first conductivity type, and a third region (24) in the substrate (11) wherein the third region (24) overlaps the first and second regions (21, 22) and wherein the third region (24) has a damaged crystalline structure.
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Chang Li-Hsin
Reynes Jean-Michel
Robb Francine Y.
Robb Stephen P.
Chaudhari Chandra
Chen George C.
Motorola Inc.
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