Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-10-25
2005-10-25
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S424000, C438S445000, C438S637000, C438S700000
Reexamination Certificate
active
06958276
ABSTRACT:
In a method of manufacturing MOSFET devices, and particularly to the trench-type MOSFET devices, embodiments of the present invention provide methods of forming bottom oxide layers having uniform thickness on the bottom of the trenches and avoiding undesired damage in the partial semiconductor substrate near the top of the trenches. In one embodiment, a method for manufacturing a trench-type MOSFET comprises providing a semiconductor substrate and forming a trench on the semiconductor substrate; forming a first oxide layer on a bottom and sidewalls of the trench and on the semiconductor substrate; forming a bottom anti-reflective coating (BARC) layer in the trench to cover the first oxide layer; forming a photoresist layer on the bottom anti-reflective coating layer; removing the photoresist layer; removing the bottom anti-reflective coating layer; and removing the first oxide layer on the sidewalls of the trench to form a bottom oxide layer on the bottom of the trench.
REFERENCES:
patent: 6265269 (2001-07-01), Chen et al.
patent: 6709952 (2004-03-01), Lai et al.
patent: 6800509 (2004-10-01), Lin et al.
patent: 2004/0203223 (2004-10-01), Guo et al.
patent: 2005/0074950 (2005-04-01), Lin et al.
Chiu Hsin Yen
Lin Chen Tang
Wu Ming Feng
Yeh Chung Chih
Le Dung A.
Mosel Vitelic Inc.
Townsend and Townsend / and Crew LLP
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