Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-10
2006-10-10
Mai, Anh Duy (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S305000, C438S520000, C438S528000
Reexamination Certificate
active
07118979
ABSTRACT:
The present invention provides a transistor100having a germanium implant region170located therein, a method of manufacture therefor, and an integrated circuit including the aforementioned transistor. The transistor100, in one embodiment, includes a polysilicon gate electrode140located over a semiconductor substrate110, wherein a sidewall of the polysilicon gate electrode140has a germanium implanted region170located therein. The transistor100further includes source/drain regions160located within the semiconductor substrate110proximate the polysilicon gate electrode140.
REFERENCES:
patent: 5970353 (1999-10-01), Sultan
patent: 6037204 (2000-03-01), Chang et al.
patent: 6229177 (2001-05-01), Yeap et al.
patent: 6361874 (2002-03-01), Yu
patent: 6528399 (2003-03-01), Alieu et al.
patent: 6682980 (2004-01-01), Chidambaram et al.
patent: 6699771 (2004-03-01), Robertson
K.K. Ng et al. Suppression of Hot-Carrier Degradation in Si MOSFET's by Germanium Doping. IEEE 1990, pp. 45-47.
K. H. Kwok et al. Boron Diffusion in High-Dose Germanium-Implanted Silicon. IEEE 1998, pp. 878-881.
Liu Kaiping
Mansoorz Majid Movahed
Wu Zhiqiang
Brady III W. James
Duy Mai Anh
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
LandOfFree
Method of manufacturing transistor having germanium implant... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing transistor having germanium implant..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing transistor having germanium implant... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3617489